| 摘要 |
A process for reducing the concentration of phosphorus in phosphosilicate glass having particular application in semiconductor fabrication is disclosed. A steam environment is provided, the temperature and pressure of which is adjusted within a predetermined range. The semiconductor device is inserted and maintained within the environment for a given time. The exposure to the steam environment effectively leaches phosphorus from the glass. The device is removed from the steam environment once a desired quantity of phosphorus has been removed.
|
