发明名称 |
DISPOSITIVO SEMICONDUTOR PROCESSO DE PREPARACAO DE UMA PLURALIDADE DE DISPOSITIVOS SEMICONDUTORES APASSIVADOS COM VIDRO |
摘要 |
A process for producing a semiconductor device comprises making incisions in a relatively large-area semiconductor body, making regions of opposite conductivity inside the region encompassed by the incision and making a second incision inside the first incision. Said second incision is coated with a glass layer in order to passivate the boundary layers which end in the second incision. The process can be used to produce any desired type of semiconductor, for example thyristors, transistors and diodes or the like. |
申请公布号 |
BR8203630(A) |
申请公布日期 |
1983.06.14 |
申请号 |
BR19828203630 |
申请日期 |
1982.06.22 |
申请人 |
WEC |
发明人 |
OSTOP JOHN ANTHONY;MARKS ROBERT WILLIAM |
分类号 |
H01L21/316;H01L21/56;H01L23/29;H01L23/31;H01L29/06;H01L29/74;(IPC1-7):H01L23/08 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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