发明名称 DISPOSITIVO SEMICONDUTOR PROCESSO DE PREPARACAO DE UMA PLURALIDADE DE DISPOSITIVOS SEMICONDUTORES APASSIVADOS COM VIDRO
摘要 A process for producing a semiconductor device comprises making incisions in a relatively large-area semiconductor body, making regions of opposite conductivity inside the region encompassed by the incision and making a second incision inside the first incision. Said second incision is coated with a glass layer in order to passivate the boundary layers which end in the second incision. The process can be used to produce any desired type of semiconductor, for example thyristors, transistors and diodes or the like.
申请公布号 BR8203630(A) 申请公布日期 1983.06.14
申请号 BR19828203630 申请日期 1982.06.22
申请人 WEC 发明人 OSTOP JOHN ANTHONY;MARKS ROBERT WILLIAM
分类号 H01L21/316;H01L21/56;H01L23/29;H01L23/31;H01L29/06;H01L29/74;(IPC1-7):H01L23/08 主分类号 H01L21/316
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