| 摘要 |
PURPOSE:To obtain a photoreceptor high in dark resistance and good in photoconductivity, by specifying a proportion of divalent silicon hydride to tervalent silicon hydride in an amorphous silicon photoreceptor in a range expressed in IR absorption intensity ration. CONSTITUTION:A photoreceptor comprises a conductive substrate (1) and a charge blocking layer (2), and a photoconductive layer (3) made of amorphous silicon contg. hydrogen. The layer (3) is an amorphous silicon layer having a combination of divalent silicon hydride and tervalent silicon hydride in the structure, and a ratio of IR absorption intensity at 2,100cm<-1> wave number for divalent silicon hydride and at 2,000cm<-1> wave number for tervalent silicon hydride is controlled to 0-0.3, thus permitting the obtained hydrogen-contg. amorphous silicon photoreceptor to be nontoxic, high in heat resistance and mechanical strength, superior in dark resistance, good in photoconductivity, and excellent in characteristics of a photoconductive layer. |
