| 摘要 |
PURPOSE:To prevent the production of a phosphoric acid due to moisture immersed to the surface of a chip by forming a silicon nitride surface protecting film on the lower layer, periphery and internal wirings of a bonding pad. CONSTITUTION:A silicon nitride film 10 is covered as a base seat of a bonding pad 4 on the phosphosilicate glass film 3 formed on an insulating film (SiO2) 2 as the surface protecting film of a semiconductor substrate 1. A pad 4 such as aluminum alloy or the like is disposed on the film 10. The internal wirings may be constructed in a structure that is contacted directly with phosphosilicate glass at the metal film. The entire surface of the wiring metal film and part of the pad are covered with a silicon nitride film 11. Accordingly, the pad has no part which is contacted directly with the glass film, and the surface protecting film of the chip is dense. Consequently, the production of phosphoric acid due the moisture immersed to the surface of the chip can be prevented. |
