| 摘要 |
PURPOSE:To prevent a parasitic effect by forming a base region made of metallic silicide and a base leading region on a region contacted with a sapphire substrate in a semiconductor region. CONSTITUTION:A semiconductor region 12 made of P type silicon single crystal is formed on a sapphire substrate 11. A base region 22 which is made of metal silicide and a P<+> type base leading region 20 which is connected to the region 22 and is contacted with the surface of the region 2 are formed on the region contacted with the substrate 11. Then, a gate electrode 13 is formed, with the film 13 as a mask N type source region 14 and N type drain region 15 are formed. Subsequently, a source electrode 17 and a drain electrode 18 are formed. Since the region 22 is low in resistance, the potential directly under the channel can be stabilized, thereby eliminating the parasitic effect. |
