| 摘要 |
PURPOSE:To form the titled film with a very small reduction in the dark conductivity by depositing an amorphous silicon hydride film on a substrate and by cooling it while applying pressure of gaseous hydrogen. CONSTITUTION:A reactive gas contg. hydrogen is introduced into a system to deposit an amorphous silicon hydride film on a substrate by glow discharge, reactive sputtering, ion plating or other method, and by introducing gaseous hydrogen into the system, the partial pressure of hydrogen is made larger than the vapor pressure of hydrogen in the formed film. The substrate is then cooled. The hydrogen concn. is not reduced in the vicinity of the surface of the film, so an amorphous silicon hydride film free from dangling bond, weak bond, etc. is formed. |
