| 摘要 |
PURPOSE:To form a diffused layer by ion implantation of low energy by growing an etching resistance film on a polycrystalline silicon film and then implanting ions with the film as a mask. CONSTITUTION:A field oxidized film 22, a gate oxidized film 23 and a polycrystalline silicon film 24 are formed on a substrate 21. An etching resistance film (a nitrided silicon film) 25 is formed on the film 24. Subsequently, with the photoresist 26 as a mask a nitrided silicon film mask 25a is formed. Then, with the film 15a as a mask the film 24 is etched, thereby forming a polycrystalline silicon gate 24a. Thereafter, the film 23 is etched to allow the gate oxidized film 23a to remain. Then, an oxidized film 28 is formed on the substrate 21. Ions are then implanted through the film 28 and the mask 25a, thereby obtaining source and drain diffused layers 27a and a diffused layer 27b which is lower in density and shallower in diffused layer 27b than the layer 27a. |
