| 摘要 |
PURPOSE:To set Vth characteristics, by setting a consturction of a MIS transistor (TR) that the gate and source can be led externally, in a gate circuit using the MIS TR. CONSTITUTION:In a gate circuit such as an inverter, OR and AND consisting of >=2 MIS TRs, a nonvolatile memory TR is used for each MIS TR and the gate G and source S of the MIS TRs can be led externally. The electrodes can be tied to external terminals SP, SN and G through electric switches SW1, SW2 and SW3. Thus, after the manufacturing stage is finished, the external terminals SP, SN and G are connected to the source and the common gate G of the MIS TRs respectively and Vth characteristics can be set arbitrarily with a voltage applied between the gate and source. |
