| 摘要 |
PURPOSE:To obtain the semiconductor laser having buried structure, threshold currents thereof are low and which has efficiency, by forming a current stopping layer preventing current leakage while being adjoined to an active layer. CONSTITUTION:A buffer layer 22, the active layers 23a, 23b, the first clad layer 24, the current stopping layer 25, the second clad layer 26 and a cap layer 27 are grown onto a substrate 20, which has a striped projection 21 and consists of N-InP, in succession through a liquid growth method. The current stopping layer 25 is formed in shape that is removed in the upper section of the striped projection 21 by using a growing solution having the comparatively small degree of supersaturation. A growing solution having the comparatively large degree of supersaturation is employed for the buffer layer 22 and the first clad layer 24 in order to grow the layers 22, 24 even in the upper section of the striped projection 21. |
