发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To reduce the cell area, to decrease the load capacitance of a word selection line, and to prevent useless power consumption, by driving only cells at cross points between row and column selection via a plurality of MOS elements. CONSTITUTION:An MOS element 105, and an MOS elements 104 which connect a bit line 113 connected to a reference potential supply means 114 and a node 126 of a cell 119 via a row selection signal line 112, are activated with a write control signal 124, and an MOS element 101 is activated with a column selection line 108. Thus, an input data bus line 117, the bit line 113, a node 26 of the cell 119 are conductive so that the cell 119 at the cross points of the row and column selection can be drien selectively. This is the same for readout, and through the constitution like this, two bit lines per cell and one power supply line are simplified as one bit line, the cell area can be decreased and the load capacitance at word selection can be decreased and the useless power consumption due to non-selection cell can be prevented.
申请公布号 JPS5897196(A) 申请公布日期 1983.06.09
申请号 JP19810194388 申请日期 1981.12.04
申请人 OKI DENKI KOGYO KK 发明人 KAWAKAMI AKIRA
分类号 G11C11/412;G11C11/4096 主分类号 G11C11/412
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