发明名称 FEINGOLDLEGIERUNGSDRAHT ZUM VERBINDEN VON HALBLEITERELEMENTEN
摘要 A fine gold alloy wire of high tensile strength for bonding semiconductor elements is disclosed. The wire consists essentially of 0.0003 to 0.010 wt % of at least one rare earth element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu,Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y, the balance being Au and incidental impurities. The wire does not present a deformed loop and has greater bond strength if it contains 0.0003 to 0.010 wt % of at least one rare earth element of the Cerium Group selected from the group consisting of La, Ce, Pr, Nd and Sm and 0.0001 to 0.0060 wt % of at least one element selected from among Ge, Be and Ca.
申请公布号 DE3237385(A1) 申请公布日期 1983.06.09
申请号 DE19823237385 申请日期 1982.10.08
申请人 MITSUBISHI KINZOKU K.K. 发明人 HOSODA,NAOYUKI;TANAKA,MASAYUKI;MORI,TAMOTSU
分类号 H01L21/24;H01L23/49 主分类号 H01L21/24
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