| 摘要 |
PURPOSE:To obtain the light-emitting device which can be operated in a high output single mode and at a low threshold current by a method wherein a stripe-formed groove is formed on a compound semiconductor substrate or layer, and an active layer is buried in said groove. CONSTITUTION:An N type InP buffer layer 32 is epitaxially grown in liquid phase on an N type InP substrate 31, an SiO2 film 33 is coated on the whole surface, and a window 33A extending in the direction of crystal axis <110> is provided on the prescribed region. Then, a groove of rectangular or trapezoidal form or the like, which is a little wider than the window 33A, is formed in the layer 32 by performing an etching using the film 33 as a mask, the unnecessitated film 33 is removed, and a non-doped InGaAsP layer 34 is grown on the whole surface. Subsequently, the film 34 is removed by etching to the extent wherein the stripe-formed active layer 34A, consisting of a layer 34, will remain in the groove 32A, and a p type InP clad layer 35 and an N type InGaAsP cap layer 36 are formed by lamination on the whole surface including the layer 34A. Then, a p type current contraction region 37, entering the layer 35 facing the layer 34A, is formed by performing a Cd diffusion on the layer 34A, while the electrodes 38 and 39 on the p-side and the n-side are coated on both front and back sides. |
