| 摘要 |
PURPOSE:To obtain the stable data write-in characteristic at the non volatile memory using FG-type FET as the cells by a method wherein the FET of the same channel width with the cell are connected in parallel as a load, and the current supplying faculty of the load FET is changed corresponding to dispersion of channel width of the cell. CONSTITUTION:The prescribed memory cell in a group of the FG-type MOSFET's arranged in a matrix type is selected according to outputs C1..., CG1... of decoders in the row and the column, the load FET Tr1 is controlled to be changed over by a write signal D to supply a voltage VP, and the informations are written in the selected cell. The FET Tr1' of the plural number are connected in parallel in place of the load Tr1, and the sum total of channel widths is made as the same with the Tr1. Because channel widths of the memory cell Tij and the respective Tr1' are dispersed by the same quantity during manufacturing, widths in the sum total is changed larger than width of one Tr1. Because the Tr1'... are set at channel width the same with the respective memory cells Tij's, a current corresponding to dispersion of channel widths of the memory cells can be supplied, and the write-in characteristic can be stabilized. |
