| 摘要 |
Fast surface states in MOS devices, such as SCCDs, are reduced by depositing a relatively thin amorphous layer containing silicon and hydrogen onto the SiO2 surface of such devices and annealing the resultant device in a non-oxidizing atmosphere for brief periods of time at a temperature in excess of the deposition temperature for the amorphous layer but below about 500 DEG C. so that free valences at the Si-SiO2 interface region are saturated with hydrogen. Surface state densities of about 4x108 cm-2eV-1 and SCCDs having epsilon =1.10-5 can be achieved via this process. The process is useful in producing SCCDs with low surface state densities and other MOS devices having low surface generated dark currents. |
