| 摘要 |
A PN or PIN junction type semiconductor photoelectric conversion device which comprises a semiconductor layer having formed therein at least one PN or PIN junction, a light-transparent, conductive layer disposed on the semiconductor layer and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, and in which light is incident to the semiconductor layer from the outside of the light-transparent, conductive layer, a photoelectric conversion function is obtained by the presence of the barrier of the PN or PIN junction formed in the semiconductor layer. In such a PN or PIN junction type semiconductor photoelectric conversion device, a light-transparent, current-permeable nitride layer is artificially formed between the semiconductor layer and the light-transparent, conductive layer. The light-transparent, current-permeable nitride layer is a conductive, insulating or semi-insulating layer. The conductive nitride layer is made of a conductive metal nitride. The insulating nitride layer is made of a silicon nitride. The semi-insulating nitride layer is made of a silicon nitride and a conductive metal nitride.
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