| 摘要 |
PURPOSE:To obtain a single crystal silicon layer being excellent in the uniformity both of the quality and thickness of a film, by applying laser beams from a number of directions when laser annealing for forming single crystals are performed. CONSTITUTION:A single crystal silicon substrate whereon a dioxide silicon layer 2 having an opening is formed is placed in the ambience of epitaxial growing, and polycrystalline silicon 4a is grown on the dioxide silicon layer 2, while a single crystal silicon layer 3a is grown in the opening of the dioxide silicon layer 2. Thereafter, the ununiform surface of the layer is irradiated by laser beams 5b applied from a number of directions, and thereby single crystal silicon layers 3b and 4b being excellent both in the thickness and quality of a film can be formed with the part of the single crystal silicon layer 3b as a nucleus, as shown in the Figure. |
