| 摘要 |
PURPOSE:To form the multilayer holes of an active element by extracting the signal input/output pads of a semiconductor element from the side surface of the element while giving the connecting action of the signals of an upper layer and a lower layer in the nultilayer structure semiconductor device. CONSTITUTION:Electrode wiring 14 extracting the signals of the drain 4 of a transistor in the first layer is connected to electrode wiring 14 extracting the signals of the drain 8 of a transistor in the second layer by a vertical electrode 15. Accordingly, the signals of the transistor in the first layer and the transistor in the second layer can be exchanged while the vertical electrode 15 functions as the pad outputting the signals of the device to external devices. A vertical electrode 16 has no input/output pad of signals, and merely serves as the connection of the signals of the electrode 14 of the source 7 of the transistor in the second layer with the inside of the first layer. |
