| 摘要 |
PURPOSE:To obtain a silicon nitride film with sufficient film thickness at a low temperature without using heat treatment at a high temperature by irradiating a laser to silicon in ammonia (NH3) or nitrogen (N2). CONSTITUTION:A silicon substrate 1 is placed into ammonia (NH3) gas. A CW laser is used as the laser beams 2 at that time. The silicon nitride film 3 is grown onto the surface of the silicon substrate 1 through the irradiation of the laser. The figure shows the case when the laser is irradiated to the whole surface of the silicon substrate, but the surface of a region in which silicon is exposed in the manufacturing process of the semiconductor-integrated circuit device can also be changed into the silicon nitride film through the same method, and the method can be applied extending over an extremely wide range on the manufacture of the semiconductor-integrated circuit device. |
