| 摘要 |
PURPOSE:To form a logic circuit by a simple constitution, by providing two kinds of gate electrodes, i.e. an enhancement type and a depression type, in a channel region between a source electrode and a drain electrode, and providing two functions by one transistor. CONSTITUTION:The source electrode 3 and the drain electrode 5 are formed on an N-type operating layer 2 formed on a semi-insulating GaAs substrate 1 by the way similar to the conventional method. One gate electrode is formed as the depression type gate electrode 41, and one gate electrode is formed as the enhancement type gate electrode 42. In this constitution, the two functions of the enhancement type and the depression type are imparted to one Schottky barrier type transistor. |
