| 摘要 |
PURPOSE:To obtain a non-volatile memory having erasable characteristic and high reliability by forming an Si nitrided film after forming an Si oxidized film and implanting light element ions of an inactive element on the film. CONSTITUTION:A P type impurity is doped on an N type substrate 101, thereby forming source and drain region 102. After an Si oxidized film is formed, a gate oxidized film 103 is formed. Then, an Si nitrided film 104 is formed, with the part except the gate as a mask 105. Subsequently, inactive light atomic ions of He<+>, N<+> are implanted by considering not to implant the ions to the film 103. Thereafter, the mask 105 is removed, part of the film 104 is then removed, an Si nitrided film 106 is again formed, and is adjusted to become the prescribed thickness toegether with the film 104. Then, after a heat treatment, a gate electrode 107 is formed. In this manner, charge which is invaded by a tunnel effect can be efficiently collected to the boundary between the Si oxidized film and the Si nitrided film, and an MNOS non-volatile memory such as the leakage to the gate electrode can be obtained. |
