| 摘要 |
PURPOSE:To make it possible to heat an insulating film (dielectric) at high temperature with respect to even the same metal wiring material and heat a substrate while cooling the same from the reverse side thereof as well as simultaneously effect a multiplicity of heat treatments wirh fewer adverse effects such as disordering of the impurity density profile it a semiconductor substrate, by a method wherein as a means for heat treatment the semiconductor surface is subjected to a microwave irradiation to selectively heat only an insulating film thereby to make the surface undergo heat flow for flattening. CONSTITUTION:After a metal wiring pattern is formed, an SiO2 film including phosphorus is deposited by CVD or other method. Thereafter, with the semiconductor substrate reverse side being cooled, the substrate surface is subjected to a microwave irradiation. Since the metal wiring is a conductor, the microwave irradiation does not directly heat the same but selectively and directly heats only the insulator as a dielectric. Therefore, the metal wiring is heated by only heat conduction from the heated dielectric (insulating film). In an example of apparatus for microwave heating, a reference numeral 4 denotes a microwave source for emitting 4a, and numerals 5 and 6 designate a semiconductor substrate and a water-cooled heat pipe, respectively. In a sectional view of a semiconductor selectively subjected to microwave heating, numerals 7 and 8 denote a semiconductor substrate and a metal wiring, respectively, and a numeral 9 designates an SiO2 film including phosphorus having been flattened through heat flow by selective heating. |
