| 摘要 |
PURPOSE:To obtain a highly integrated circuit, by forming input output aligning circuit elements on a dielectric layer which is formed so as to cover the surface of a GaAs substrate. CONSTITUTION:The input output aligning circuit parts 6 and 7 are located on the dielectric layer 10 which is formed on the GaAs substrate 1. Said aligning circuits are distribution constant circuits wherein a source electrode 3 is a grounding plate. When the dielectric constant epsilon of the dielectric layer 10 is selected so that it is larger than the dielectric constant of the GaAs substrate, the size of the aligning circuit pattern can be made small in inversely proportional to epsilon1/2. By providing a cubic structure, the source electrode 3, which has been used ineffectively, can be utilized as the grounding substrate of the distribution constant lines, and the chip area can be further reduced. |
