| 摘要 |
PURPOSE:To prevent the formation of an N-P inverted layer in an InP/InGaAsP series light receiving element forming a p<+>n junction when reverse bias is applied, by implanting impurity ions in an n type InP layer, and performing heat treatment. CONSTITUTION:An n-InGaAs layer 16 is provided on an n<->-InP layer 15, and Be ions are implanted. Then the heat treatment is performed for about 20min at 750 deg.C. A p<+> region 17 is formed so as to reach the interface between the n-InP layer 15 and n-InP layer 14. Thereafter, the n-InGaAs layer 16 is removed by using etching liquid of HNO3:HF=1:1. A P-side electrode 18 is formed on the p+ region 17 by AuZn or the like. An N-side electrode 19 is formed on the back surface of an n<+>-InP substrate 11 by AuGe or the like, and an insulating film 20 is formed by silicon nitride or the like. |
