| 摘要 |
PURPOSE:To improve the yield rate and the performance of an a-Si solar cell, by forming a tungsten layer between a transparent conduting film and an amorphous silicon. CONSTITUTION:Light is irradiated from the direction of an arrow B. A glass substrate 21 having a transparent conducting film 22 is used in this manufacturing method. A tungsten is evaporated on said glass substrate by an electron beam evaporating machine. An a-Si layer 24 and a metal electrode 25 are attached to the tungsten film 23, and the thin film solar battery is completed. Since the tungsten film is very thin, the amount of the light, which is inputted into the a-Si, is hardly reduced. Since the effect for preventing the diffusion of the element constituting the transparent conducting film is increased, a leak current is decreased, a curve factor and an release voltage are increased, and the improvement in transducing efficiency and the improvement in the yield rate can be implemented. |
