| 摘要 |
PURPOSE:To reduce defective errors, and to elevate surface accuracy, head detaching and attaching resistance characteristics, productivity, etc., by using a single crystal Si wafer as a substrate, and manufacturing a gamma-Fe2O3 thin film magnetic disk. CONSTITUTION:On a single crystal Si wafer 30 whose thickness is >=0.3mm., a gamma-Fe2O3 thin film 31 whose thickness is <=0.2mum is formed by means of sputtering, etc., and also in order to make a disk have mechanical strength, a reinforcing plate 32 consisting of light metal such as Al, Ti, etc., or a light alloy such as an Al alloy, a Ti alloy, etc. is stuck to the other surface of the Si wafer 30 by an adhesive material 33, by which a magnetic disk is obtained. |
