| 摘要 |
PURPOSE:To prevent malfunction due to alpha-rays without lowering yield in the manufacturing process by making film tickness on the periphery of the bonding- pad of a protective film for considering a counterplan to alpha-rays formed to the surface of a semiconductor thinner than film thickness on other regions. CONSTITUTION:The first layer alpha-rays shielding film 3-a of the peripheral film thickness of the bonding-pad 3-b is shaped to the surface of a semiconductor substrate 3-c. The alpha-rays shielding film of the surface of the bonding-pad is removed by using a selective etching method. The alpha-rays shielding film 3-a is solidified through heat treatment up to form difficult to be etched. The second layer alpha-rays shielding film 3-d is shaped. The second layer alpha-rays shielding film 3-d of the periphery of the bonding-pad is removed through the selective etching method. The whole is thermally treated, and the quality of the first layer and second layer alpha-rays shielding films 3-a, 3-d is equalized. |
