发明名称 MAGNETRON TYPE SPUTTERING DEVICE
摘要 PURPOSE:To sputter a ferromagnetic material through a magnetron type sputtering device, by providing grooves in the surface of a ferromagnetic material target, and giving N or S polarity to its opposite end part. CONSTITUTION:In the surface of a target 1 made of a ferromagnetic material such as Fe, Ni, and Co, grooves 3 are formed and on its reverse surface, an E- shaped magnet 3 is provided. The device is evacuated to a low vacuum, Ar gas is admitted, and the magnet 2 established a magnetic field to the target 1. The thickness of the target 1 is reduced partially at the grooves 3, so magnetic saturation is easily obtained by using a relatively weak magnet 2 to form lines of magnetic force 15 between the N and S poles. At this time, a voltage from a power source 12 is applied between the target 1 as a cathode and an anode 11 to cause glow discharged, and then the target material is hit out of the grooves 3 by the impact of cations to form a plating film 16 of the ferromagnetic material on the surface of a substrate 13, thus performing low-temperature speedy magnetron sputtering.
申请公布号 JPS5891168(A) 申请公布日期 1983.05.31
申请号 JP19820192072 申请日期 1982.11.01
申请人 TOKYO SHIBAURA DENKI KK;TOKUDA SEISAKUSHO:KK 发明人 WATANABE SUSUMU;KURISAKI TETSUO;ITOU YOSHINORI
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
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