| 摘要 |
PURPOSE:To obtain a photoreceptor having high sensitivity and high durability by forming an inhibiting layer for implantation of electric charge of amorphous silicon (a-Si) on the surface of a conductive substrate, a photosensitive layer of a-Si or a-Si doped with B, Ge and a surface protective layer of a-Si added with C successively. CONSTITUTION:An inhibiting layer 5 for implantation of electric charge is provided on the surface of a substrate 4 vapor deposited with Ni-Cr or a transparent conductor on an Al (alloy) or glass plate by forming an a-Si layer doped with several 10-several 100ppm B for positive charging and several 10-several 100ppm P for negative charging. A non-doped a-Si layer or an a-Si layer doped with several-several 10ppm b or an a-Si layer doped with Ge is formed as a photosensitive layer 6 on the layer 5. Further, the a-Si layer incorporated with C is formed as a surface protective layer 7 on the layer 6. Thus the photoreceptor having high sensitivity and high durability and suffiecient surface potential receiving power in both positive and negative charging is obtained. |
