| 摘要 |
PURPOSE:To have the resistor, to be connected to the emitter or the base of a transistor, built-in in the same chip by a method wherein an island type electrode isolated from the surrounding parts is provided on the emitter or the base electrode of the transistor of planar structure, and a lead wire is connected to the island type electrode. CONSTITUTION:A transistor is formed by diffusing a P-base layer 3 from the surface of an N type silicon substrate 2, and a planar structure which was formed by diffusing an emitter layer 4 from the surface is provided in the transistor. In the region where the oxide film 5 is coated on the surface, an emitter electrode 6 consisting of an aluminum vapor-deposited film, for example, and a base electrode 7 are provided. An N<+> layer 8 is provided on the lower side of a substrate 1 for connection with a collector electrode which is not appearing in the diagram. A groove 9, whereon electrode metal was removed and an island- formed electrode 61 was left over by performing an optical etching method, is formed on the emitter electrode 6. An emitter lead wire 10 is adhered to an island-formed electrode 61. |
