| 摘要 |
PURPOSE:To eliminate a defect such as a disconnection by forming by the first etching of a conductor film an electrode wiring pattern, and performing the second etching, thereby forming the edge part formed on the pattern in a smooth shape. CONSTITUTION:An N type active layer 3 is formed on a semi-insulating GaAs substrate 1, and a conductor film 4 made of high melting point metal silicide is then formed. A mask 5 is formed, a gate electrode 6 and the wiring pattern 7 of the first layer are formed, the mask 5 is removed, etching is performed, thereby shaping the sectional shape. With the electrode 6 and the mask 8 as masks a source high density region 9 and a drain high density region 10 are formed, the mask 8 is removed, the electrode 6 and the pattern 7 are etched, and electrodes 11, 12 are then formed. An interlayer insulating film 13 is formed, a conductor film of the second layer is formed, the prescribed patterning is performed, thereby obtaining the wiring pattern of the second layer. |
