发明名称 MANUFACTURE OF SUBSTRATE FOR SURFACE ACOUSTIC WAVE ELEMENT
摘要 PURPOSE:To grow crystal of a specific composition around the surface of a flat plate with arranged crystal axes, by thermally treating a glass component on the flat plate consisting of BaO, SrO, TiO2 and SiO2, through the provision of temperature gradient vertically to the plate surface. CONSTITUTION:BaO, SrO, TiO2 and SiO2 are weighed to obtain the composition indicated by formula (Ba1.0, Sr1.0)TiSi2O8 and mixed with the wet process. After the mixture is dried, it is ground and formed under pressure. A sintered body obtained by sintering it is subjected to high frequency heating, and the molten substance is rapidly cooled to obtain a transparent glassy lump. The lump is cut into a flat plate and one side is optically polished. This flat plate is arranged on the plate surface with a temperature gradient and subjected to heat treatment. Thus, piezoelectric crystal expressed by (Ba2-xSrx)TiSi2O8 (0<x<=2.0) is grown around the surface of the plate, allowing to obtain a substrate member used for a surface acoustic wave element such as a filter and a delay line.
申请公布号 JPS5884516(A) 申请公布日期 1983.05.20
申请号 JP19810182267 申请日期 1981.11.16
申请人 HITACHI SEISAKUSHO KK 发明人 TAKEUCHI HIROYUKI;ITOU YUKIO;NAGATSUMA KAZUYUKI
分类号 H03H3/08;(IPC1-7):03H3/08 主分类号 H03H3/08
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