| 摘要 |
PURPOSE:To improve yield rate in production by previously forming a current block layer besides a mesa stripe and growing only one layer of the current block layer. CONSTITUTION:Two parallel grooves 105, 106 with 5mum width and 2mum depth are formed to a multilayer film structure semiconductor wafer, which is manufactured by laminating an n-InP buffer layer 102, a non-doped InGaAsP active layer 103 and a p-InP clad layer 104 onto a (100)n-InP substrate 101 in succession, in parallel in the <011> direction through mesa etching deeper than the InGaAsP active layer 103, and the mesa stripe 107 with 3mum width containing an active layer, which emits light and is recombined by the grooves, is shaped. A SiO2 film as an etching mask is left, Zn as a p type impurity is selectively diffused, and a Zn diffusion current block region 108 is formed. An n-InP current block layer 109 is laminated except only the upper surface of the mesa stripe 107, and a p-InP buried layer 110 and a p-InGaAsP electrode layer are grown extending over the whole surface. |
