| 摘要 |
A metal oxide film (3) is formed on a hole injection electrode (2). A hole injection layer (4), a luminescent layer (5), and an electron transport layer (6) each made of an organic material are formed in this order on the metal oxide film (3). An electron injection electrode (7) is formed on the electron transport layer (6). The metal oxide film (3) is made of gallium oxide, tantalum oxide, lanthanum oxide, indium oxide, tin oxide or platinum oxide. The thickness of the metal oxide film (3) is preferably in the range from 1 ANGSTROM to 100 ANGSTROM , more preferably in the range from 5 ANGSTROM to 20 ANGSTROM , and even more preferably about 10 ANGSTROM . The metal oxide film (3) is formed by helicon sputtering. <IMAGE> |
