发明名称 |
METHOD OF FORMING ADJACENT IMPURITY REGIONS OF DIFFERENT DOPING IN A SILICON SUBSTRATE |
摘要 |
A method for forming adjacent impurity regions of differing conductivities in a semiconductor substrate without using lithography. N type impurities of a first conductivity are introduced into the substrate to form first impurity regions. The substrate is then oxidized to create a mask having a thickness which is greater over the N type impurity regions than over the remainder of the substrate. A portion of the masking layer is then removed, preferably by dip-etching, to a depth which is sufficient to re-expose the substrate only. Impurities of a second conductivity are then introduced in the substrate adjacent the N type impurity regions, with the remaining portion of the mask protecting the N type impurity regions from introduction of the second impurities therein. |
申请公布号 |
DE2965185(D1) |
申请公布日期 |
1983.05.19 |
申请号 |
DE19792965185 |
申请日期 |
1979.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GOTH, GEORGE RICHARD |
分类号 |
H01L29/73;H01L21/033;H01L21/22;H01L21/225;H01L21/266;H01L21/316;H01L21/331;H01L21/76;H01L29/88;(IPC1-7):H01L21/18;H01L21/31;H01L29/08 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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