发明名称 Plating process
摘要 In a simple process for plating silicon with nickel which does not require any catalytic pretreatment of the silicon surface which is to receive the nickel, a silicon substrate is immersed in a suitable nickel bath which is such that nickel ions are reduced to solid nickel in the bath and are deposited on the substrate to form a layer which adheres to it. The process is suitable in a particularly advantageous manner for nickel-plating silicon devices which have p-n junctions near the surface, for the purpose of forming ohmic contacts.
申请公布号 DE3145008(A1) 申请公布日期 1983.05.19
申请号 DE19813145008 申请日期 1981.11.12
申请人 MOBIL TYCO SOLAR ENERGY CORP. 发明人 B. PATEL,KIRIT;GONSIORAWSKI,RONALD
分类号 C23C18/16;C23C18/18;C23C18/32;H01L21/288;(IPC1-7):C23C3/00;H01L31/18;H01L21/28 主分类号 C23C18/16
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