| 摘要 |
PURPOSE:To increase the working accuracy of an X-ray absorber pattern formed by a pattern and to contrive the improvement of productivity by a method wherein an Si nitride film pattern consisting of a desired exposure mask and a complementary pattern is formed on the surface of an Si substrate. CONSTITUTION:An Si nitride film or an Si oxide film is formed on either of the surfaces of an Si single crystalline substrate 11 and a P<+>Si layer 13 is formed on the other surface. Next, an Si nitride film 14 is formed on the surface of the layer 13 and a desired resist pattern 15 is formed on the surface of the film 14. After forming a pattern 14' by etching the film 14 by using the pattern 15 as a protective mask, the pattern 15 is removed. The side of the pattern 14' obtained in this way is nearly vertical to the substrate 11. Then, a W thin film 16 is deposited on the surface of the layer 13 so as to bury the opening portion of the pattern 14'. This thin film pattern 16 becomes a complementary pattern for the pattern 14', while, a protective film 12' is formed by patterning the film 12 in a desired shape. The film 12' is used as a protective film and the substrate 11 is etched from the opening portion of the film 12'. |
