| 摘要 |
PURPOSE:To form an Al-group electrode endurable heat treatment at 500 deg.C or above by a method wherein ion implantation is applied from a thin metal layer with high melting point formed on an Si substrate and after that, a silicide layer is formed by executing heat treatment at relatively low temperature. CONSTITUTION:After forming an oxide film 12 on an Si substrate 11, the surface 13 of the Si substrate is exposed. Next, an Mo film 14 with a film thickness of 500Angstrom or less is formed and ion implantation is applied from the upper portion. After that when heat treatment at 400-600 deg.C is done under H2 gas atmosphere, Mo silicide 16 is selectively formed on only the surface of a layer 15 to be formed a contact layer. Next, the activation of implantation ion is done by performong heat treatment at 800 deg.C or more in N2. Then, after depositing Al17, an ohmic electrode is formed by performing patterning. This can prevent a remarkable increase in contact resistance and the occurrence of the short-circuit of a p-n junction as well even if heat treatment exceeding 500 deg.C is applied. |
