| 摘要 |
PURPOSE:To obtain a semiconductor laser which can be readily manufactured by forming an injected current limiting region in the step of epitaxially growing, thereby reducing the irregularity in the element characteristics and forming an active layer and the region in one crystalline growing step. CONSTITUTION:A p type InP current block layer 2 grown except the top of a mesa stripe, an n type InP clad layer 3 laminated over the entire surface, a non-doped InGaAsP active layer 4, a p type InP clad layer 5 grown by reducing the thickness directly above the mesa stripe, and a p type InGaAsP cap layer 6 laminated so that the surface substantially becomes flat are sequentially formed on a mesa substrate 1 having 31, 32 at both sides of a mesa stripe 20. A p type side metal electrode 11 of Au-Zn and an n type side metal electrode 12 of Au- GeNi material are formed at the electrode. Since the layer 4 is bent directly above the mesa stripe 20, it has high equivalent refractive index, and a light waveguide 7 is formed at this part. Accordingly, since the region in which an injected current is concentrated coincides with the waveguide 7, the injected current can contribute efficiently to a laser oscillation. |
