| 摘要 |
PURPOSE:To economically construct a high withstand voltage bidirectional semiconductor switch capable of controlling in high sensitivity with a light or an electric signal in a semiconductor substrate by burying a net-shaped layer connected to the terminal electrode provided at an emitter layer exposed partly on the surface of a semiconductor of the same conductive type as a base layer in a collector layer. CONSTITUTION:A P<+> type layer 12, two P type regions 13, 23 and N type regions 14, 24 existing in the regions 13, 23, respectively are formed in an N type silicon substrate 11, thereby forming two sets of thyristors 31, 32, and a P<+> type regions 15, 25 partly exposed on the surface in net or lattice shape are formed in an N type layer 11. When the terminal K1 is positive to the terminal K2, the voltage of K1 is applied through the regions 15, 11 to the layer 12 shortcircuited thereto. Accordingly, the layer 12 at the anode side of a thyristor 32 becomes positive to the layer 24 at the cathode side, and becomes conductive when the light is incident to the vicinity of the P-N junction between the layers 23 and 11. On the contrary, when the terminal K2 is positive to the K1, entire the same manner is performed for a thyristor 31. |
