| 摘要 |
Semiconductor elements are fixed at a radiating plate. The slit, which is formed in the back side of the radiating plate of a cavity, is accepted in order to locate at a distributing part of the radiating plate. The resinoid is injected in the cavity and in the slit. After the resinoid is hardened, the semiconductor device is taken out from the cavity, and then the resinoid established in the slit is removed.
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