| 摘要 |
PURPOSE:To attain horizontaly high circuit integration and high yield, by providing an overflow drain for a specific part among vertical picture elements and shrinking the area occupied by this overflow drain. CONSTITUTION:A plurality of a island shaped picture elements 12 having a photo sensing section are provided on a semiconductor substrate. Further, CCD registers 13(131,132...) are provided at a gap of picture element train prolonged vertically. An island shaped overflow drain 14 to absorb excessive charges from each picture element vertically is respectively provided at a gap three gaps apart out of vertical gaps of the picture elements 12. An overflow drain control gate 15 is provided between the drain 14 and picture elements adjacent to the drain and between the picture elements 12 adjacent vertically to absorb the excessive change to the same drain 14. Thus, the degree of circuit integration toward horizontal direction can considerably be improved. The separation region for the drain 14 and the picture elements 12 or the register 13 can be decreased and high yield can be obtained. |
