| 摘要 |
PURPOSE:To increase dielectric resistance by forming a region with high impurity concentration into source and drain regions with low impurity concentration by using two kinds of impurities. CONSTITUTION:A field oxide film 6 is formed into an inactive region on the main surface of an N type Si base body 1 and a gate insulating film 7 into an active region respectively, and the gate electrode 8 of polycrystal silicon is shaped onto the gate insulating film 7. Phosphorus is added to the base body through ion implantation while using the gate electrode 8 as a mask, and the source region 9 and the drain region 10 are formed. An SiO2 film 11 is molded onto the regions 9, 10 and the gate electrode 8, and the N type regions 12, 13 with high concentration are shaped into the regions 9, 10 through the implantation of arsenic ions. The source and drain regions are shaped in double region structure in which the high-concentration N type regions 12, 13 are intruded into the N type regions with comparatively low concentration, and dielectric resistance is increased. |
