FLOATING GATE MEMORY CELL

摘要

A memory cell includes a selection transistor and a memory transistor formed as insulated gate field effect transistors. The transistors are formed on a substrate with a channel for the selection transistor coupled to a channel for the memory transistor. A layer of oxide overlies both transistors. The channels are formed between a programming line and a reading line formed in the substrate. A thin film window in the oxide overlies a region of the programming line. An insulated, floating gate is formed overlying the window and the channel of the memory transistor. A gate electrode overlies the floating gate and the channel of the selection transistor.