| 摘要 |
<p>PURPOSE:To omit a resin film which covers the side surface of a pressure detecting element and to prevent the leakage even though pinholes are yielded in a resin film which covers an electrode, a wire, and a terminal. CONSTITUTION:A numeral 11 is a P type semiconductor diffused layer which is formed so as to surround a strain gage element 2 and to reach a P type semiconductor substrate 10. In the device constituted in this way, the P type strain gage element 2 is perfectly separated electrically by a P-N junction comprising the P type strain gage element 2 and an N type semiconductor layer and a P-N junction comprising the N type semiconductor layer 1 and a P type semiconductor substrate 10. Therefore, when the vicinity of the electrode 3, the wire 4, and the terminal 8 is filled with conductive material, the leakage current does not flow if the pinholes are not simultaneously yielded in the electrode 3, the wire 4, and the terminal 8, which have different potentials.</p> |
