| 摘要 |
<p>A thermal migration process to produce a doped region (6) in a silicon semiconductor body (1) in which a face (8) of the silicon slice (1) having a layer of aluminium (7) is maintained at a temperature just below the eutectic temperature. A laser beam (11) is directed onto the opposite face (10) of the slice (1), locally heating, setting up a thermal gradient through the slice and further heating a small area of the first face above the eutectic temperature. The silicon and aluminium in that area form a region of molten alloy (7a) which migrates through the slice (1) leaving behind it a doped region (6). Because heating by the laser beam (11) is localised there is no need to deposit the aluminium in the plan of the final doped region (6) so that a uniform layer can be deposited over the whole slice (8). A finished doped region having, for example, a rectangular grid plan (6, Figure 2b) is produced by relative movement of the slice (1) and the laser beam (11) and this movement can be either a continuous, smooth and gradual movement to provide for substantially simultaneous movement of the doped region or, it may be a stepped movement providing a stepwise formation.</p> |
