| 摘要 |
PURPOSE:To contrive to simplify the manufacturing process of solar cell, and to attain mass production of solar cell having a favorable characteristic by a method wherein a lattice type electrode is formed at the same time with formation of a P-N junction and a reflection preventing film. CONSTITUTION:An applied film is formed on the photo detecting face side of a semiconductor substrate 1 using an applying matter containing a dopant for formation of a P-N junction in a solvent containing a solute mainly composed of a metal alkoxide. Then conductive paste formed in a pattern of lattice type electrode for collection of current is arranged on the applied film thereof to form an applied film of paste, while the substrate 1 arranged with conductive paste is baked for the prescribed hours at the prescribed temperature. By this baking, a P-N junction interface 3, a reflection preventing film 2 of metal oxide, a lattice type surface electrode 4 and a back electrode 5 are formed at the same time. The metal alkoxide thereof is made with tantalum alkoxide, and the metal oxide of the preventing film 2 is made with tantalum pentaoxide. Accordingly the manufacturing process of solar cell is simplified, and mass production of solar cell having a uniform characteristic can be attained. |
