| 摘要 |
PURPOSE:To facilitate manufacture, and to improve the temperature characteristics, etc., of a semiconductor laser by a method wherein epitaxial growth layers containing an active layer formed in a groove are formed in the manner not to extend over the dielectric film adhered on the main surface of a semiconductor substrate. CONSTITUTION:A dielectric layer 12 of Si3N4 is formed according to the CVD method on a semionductor substrate 1, and patterning is performed according to the photoetching method. After a groove is formed according to the chemical etching method, etc., a first semiconductor layer 6 consisting of N type InP, a second semiconductor layer 7 consisting of InGaAsP, a third semiconductor layer 8 consisting of P type InP and a fourth semiconductor layer 9 consisting of P type InGaAsP are formed by crystal growth according to the liquid phase epitaxial growth method. According to the liquid phase epitaxial growth method, the crystal is not grown on the dielectric film 12 being amorphous like Si3N4, and is grown only in the groove, and the manufacturing yield of the semiconductor laser is improved, and after then, a first electrode 10 and a second electrode 11 are adhered on both the faces, and the temperature characteristics, etc., are improved. |
