| 摘要 |
PURPOSE:To obtain a semiconductor device having high reliability by providing source and drain regions of the second conductive type formed separately from each other and a gate electrode formed to cover part of a thick insulating film on a semiconductor substrate of the first conductive type, thereby stabilizing the characteristics of a transistor. CONSTITUTION:A deep well 12 of the second conductive type is formed in a semiconductor substrate 11 of the first conductive type to separately form a source 13 and a drain 14 of the second conductive type regions, and a thin gate insulating film 15 and a thick field insulating film 16 are formed between the source 13 and the drain 14. A polycrystalline silicon 17 to become a gate electrode is formed through the both insulating films, and the film 16 is formed at the region in which the drain region 14 is connected to the well 12. A polycrystalline silicon gate electrode 17 which is formed of a part buried under the surface of the substrate 11 and a part projected on the surface with the end having an oblique part is formed to cover the thin gate oxidized film and the oblique part of the film 16. |
