| 摘要 |
PURPOSE:To obtain a semiconductor laser which has a low oscillation threshold current and highly differentiated quantum efficiency. CONSTITUTION:A P type photoguide layer 14 is formed, a photoguide layers 12, 14 are disposed at both sides of an active layer 13, thereby adding impregnating effect to the layer 14. Thus, the coupling efficiency to the output region can be increased, and the light enclosing coefficiency can be approached to the optimum value. The differentiated quantum efficiency can be improved, and the oscillation threshold current can be reduced. The sum of the thicknesses of the layers 12, 14 in the output region can be adjusted to the desired value, thereby freely selecting the light emitting angle. In this manner, the oscillation mode can be controlled, the oscillation threshold current can be reduced, and the differentiated quantum efficiency can be enhanced, thereby increasing the output. |
