| 摘要 |
PURPOSE:To allow the fine formation of an element, by leading out ohmic electrodes from inside the aperture of an insulating film provided on an active layer onto the insulating film resulting in a contactless constitution with a substrate. CONSTITUTION:An SiO2 film 11 is formed on the semi-insulating substrate 1 constituted of GaAs, next the aperture 12 is provided, and the active layer 12 is formed on the aperture 12 part. Next, the film 11 is once removed, an SiO2 film 13 is formed again, and an aperture 14 is provided at the position approximately the same as that of the aperture 12. Next, a gate electrode 15 is formed in the aperture 14. Next, N<+> regions 16, 16' as source and drain regions are formed on the part of the layer 2 wherein the surface is exposed. Next, the film 13 is removed, and an SiO film 17 is formed on the substrate 10. Next, the film 17 is selectively removed, and apertures 18, 18' are formed on the regions 16, 16'. Source and drain electrodes 19, 19' which take ohmic contact with the regions 16, 16' exposed in the apertures 18, 18' and are led out to the film 17 are formed. Thus, the margin for the positioning to form a contact electrode is unnecessitated, and accordingly microminiaturized element can be formed. |
